Yuav Ua Li Cas UNPARALLELED Cov Qib Thiab Cov Tsev Muag Khoom Nws Tshwj Xeeb Siab -Density Granite Blocks kom ruaj khov cov khoom tiav ntawm qhov chaw

Advanced wafer soj ntsuam cov cuab yeej rau kev txiav -ntug manufacturing imposes nanoscale stringent cov cai ntawm substrate cleanness thiab electrostatic tswj. Ordinary granite theem yam tsis muaj kev kho mob tshwj xeeb raug kev txom nyem los ntawm ob qhov kev lag luam loj heev. Ua ntej, cov nqi hluav taws xob zoo sib xyaw ua ke los ntawm kev sib txhuam, thiab cov hluav taws xob hluav taws xob tam sim ntawd tuaj yeem tawg los ntawm ultra- cov qauv rooj vag nyias, ua rau cov khoom loj wafer scrapping. Qhov thib ob, soluble hlau ions nyob rau hauv lub pob zeb leach maj mam dhau lub sij hawm, kis kab mob wafer optical paths thiab nti circuits thiab ua rau luv luv circuits thiab tsaus qhov chaw tsis xws luag. Cov tuam txhab pob zeb feem ntau ntawm kev ua lag luam tsuas yog ua kom yooj yim polishing yam tsis muaj kev sib xyaw ua ke los tiv thaiv - zoo li qub thiab qis- ion leaching processing workflows, ua rau lawv cov khoom tsis sib xws nrog ISO Class 5/6 cleanroom ib puag ncig rau kev tshuaj xyuas wafer. Raws li tus qauv tsim qauv ntawm semiconductor-qib huv granite, UNPARALLELED® leverages tshwj xeeb ultra-qis- ion dub granite ore peev txheej, Chav 10,000 cov kab ntau lawm huv si, thiab chav kuaj semiconductor tshwj xeeb los tsim cov txheej txheem kev sib xyaw ua ke los tiv thaiv{{{16}1}18} kev daws teeb meem thiab kev tiv thaiv {{16}18} kev daws teeb meem. Tag nrho-txheej txheem txheej txheem suav nrog kev tshuaj xyuas cov khoom siv raw, precision machining, kev hloov kho saum npoo, txheej txheej sealing, thiab kev tshuaj xyuas lub Hoobkas, ib txhij ua tau raws li qhov yuav tsum tau ua ntawm electrostatic dissipation thiab zero -zero ion leaching, thiab xa cov kev daws teeb meem raws li substrate rau AOI tshuab, sojntsuam chaw nres tsheb, thiab optical chaw nres tsheb.
Pem hauv ntej- qhov kawg graded raw khoom ntsuam xyuas ua lub hauv paus tseem ceeb ntawm tag nrho cov kev daws teeb meem los tswj ion leaching txaus ntshai los ntawm qhov chaw. Wafer-dawb substrates txais tshwj xeeb ultra-homogeneous low-ion dub granite. Thaum lub sij hawm quarrying, cov pob zeb hauv av ua rau cov dej soluble hlau ntsev xws li feldspar thiab mica raug tshem tawm. Thaum tuaj txog ntawm lub Hoobkas, kev tshuaj xyuas ua ntej - kev tshuaj xyuas rau ion dissolution yog siv, khaws cia tsuas yog cov blanks uas tsim nyog rau qib sodium, potassium, hlau, thiab tooj liab ions. Tus nqi nqus dej ib txwm tswj tau tsawg dua lossis sib npaug li 0.08% nrog qhov tsawg kawg nkaus micro-capillary pores. Tsis zoo li dav dav - lub hom phiaj lub tshuab cuab yeej pob zeb, tag nrho cov pob zeb nyoos rau cov khoom siv wafer tau dhau 7-hnub dej ntshiab soaking ua ntej- kho kom elute dawb soluble hauv ions ua ntej. Tom qab ziab, lub pob zeb mus rau kev ua haujlwm kom tshem tawm cov kab mob sib kis hauv cov kab ntau lawm huv si thaum lub sijhawm ua haujlwm ntev -. Kev ntsuam xyuas tus yam ntxwv electrostatic tseem tseem ua tiav rau cov ntaub ntawv raw los tsis lees txais cov khoom tsis tsim nyog uas muaj cov khoom siv hluav taws xob ua kom muaj kev cuam tshuam rau saum npoo tsub zuj zuj, txo cov kev nyuaj rau kev hloov kho los tiv thaiv zoo li qub.
Segmented huv precision machining sib npaug ultra- du nto nrog plua plav tsis tshua muaj thiab qis ion poob. Lub voj voog machining tag nrho yog ua tiav nyob rau hauv qhov chaw kaw tsis tu ncua -kub, qhov tsis tu ncua -chav av humidity 10,000 chav ntxuav kom tiv thaiv cov impurities sab nraud los ntawm adhering rau pob zeb pores. Hlau-dawb pob zeb diamond abrasives yog siv rau kev sib tsoo ntxhib, zoo sib tsoo, thiab nano- polishing kom tsis txhob nthuav tawm exogenous metallic impurities xws li hlau thiab txhuas. Semiconductor- qib siab- purity deionized dej tsis muaj ntsev los yog surfactants yog siv los ua lub tshuab ua kom txias los tiv thaiv ion residue infiltration mus rau hauv cov khoom siv lead ua. Qhov kawg nano- polished nto ua tiav qhov roughness Ra Tsawg dua lossis sib npaug li 0.05 μm. Lub ultra- du nto drastic txo triboelectric them thiab plua plav adsorption, thaum txiav ion leaching txaus ntshai tshwm sim los ntawm cov khoom ntub dej. Tom qab kev ua haujlwm, peb-theem ultrasonic huv huv ntxuav tshem tawm cov seem abrasives thiab cov kab ions uas nyob hauv qhov khoob, ua raws li siab- kub kom qhuav kom qhuav thiab kaw cia kom tsis txhob muaj kev sib kis thaum lub sijhawm ua haujlwm.
Lub dual-txhim kho cov txheej txheem txheej txheej txheej txheej txheej txheej txheem txheej txheem, xa mus ntev-lub sij hawm tiv thaiv- zoo li qub thiab ion barrier tiv thaiv ib txhij. Kev pov tseg qhov tsis zoo ntawm ib qho - txheej tiv thaiv - cov txheej txheej zoo li qub tau siv dav hauv kev lag luam - nquag ion leaching thiab hnav tsis zoo - UNPARALLELED tus kheej- txhim kho ib qho semiconductor- tshwj xeeb qis- ion electrostatic dissipative siv ob txheej txheej. The bottom ion barrier sealing layer fully fills micro intergranular pores of the stone to form a dense isolation film that completely blocks outward leaching of internal metal ions. Cov pa roj carbon nanotube electrostatic dissipative txheej sab saum toj tsis muaj cov khoom siv hlau ua kom tsis txhob muaj kuab paug ntxiv ion, tsis tu ncua tswj qhov chaw tiv thaiv nyob rau hauv tus qauv ntau ntawm 10⁷ ~ 10⁸ Ω raws li kev cai huv ESD tswj, maj mam tso cov nqi hluav taws xob thiab tshem tawm cov hluav taws xob tam sim no siab heev -voltage Qhov qis -VOC silicone- txheej dawb tiv thaiv rov qab so nrog cov ntaub huv huv nrog rau cov kua qaub thiab alkaline ntxuav reagents, zam pulverization, tev, thiab cov kab mob sib kis ntawm wafers dhau lub neej ua haujlwm ntev. Cov txheej txheem tag nrho yog segmented curing nyob rau hauv ib qho huv si tas li -kub chamber kom maj mam tso cov txheej txheej sab hauv thiab tiv thaiv kev tawg tsis ua haujlwm.
Cov txheej txheem ua tiav ntawm cov qauv hauv av ua kom zoo dua cov khoom siv hluav taws xob electrostatic tawm kom tshem tawm cov nqi hauv cheeb tsam. Kev cai integrated conductive grounding bases yog tsim tshwj xeeb rau wafer tshuaj xyuas platforms. Embedded ion-dawb conductive contacts yog pre-reserved nyob rau theem los tsim seamless conduction ntawm coatings thiab grounding structures, kom ntseeg tau tias tsis sib xws nyob rau hauv tag nrho cov nto uas tsis muaj nyob rau hauv lub zos electrostatic dig muag cheeb tsam. Insulated ya raws-cov ntaub ntawv pov thawj tau muab tso rau hauv qab kom cais tawm cov nqi hauv av thiab thaiv kev nkag mus rau hauv av, ntxiv ion leaching. Txhua lub rooj sib txoos hauv av tau txais cov khoom siv stainless hlau tsis huv uas tsis muaj galvanized lossis tooj liab-plated Cheebtsam uas tsis muaj kev pheej hmoo ntawm cov hlau ion leaching.
Kev ua tau zoo dual -kev ua haujlwm ntawm lub Hoobkas kuaj xyuas kom paub meej tag nrho traceability ntawm tag nrho cov ntaub ntawv kom ua tau raws li kev soj ntsuam nruj nruj los ntawm cov tuam txhab semiconductor. Tom qab ntau lawm, txhua wafer- cov theem tshwj xeeb granite tau dhau los ua ob pawg kev sim siab:
Anti-Kev ntsuas kev ua haujlwm zoo li qub: Ntau- taw tes qhov ntsuas qhov ntsuas qhov ntsuas tau lees paub qhov ua haujlwm ruaj khov ntawm tag nrho cov theem nyob rau hauv tus qauv ntau yam tsis muaj qhov hloov pauv loj heev nyob rau hauv qhov siab thiab qis qis.
Ion leaching testing: 24-teev dej ntshiab soaking los ntsuas cov ntsiab lus ntawm cov hlau ions, nrog rau tag nrho cov teeb meem ion theem deb tshaj li kev lag luam txwv.
Tag nrho cov kev ntsuas ntsuas rau flatness, roughness, particle tiam, thiab dej nqus yog ua concurrently. Tag nrho cov cuab yeej ntsuas yog traceable mus rau lub xeev metrology institutes, thiab tag nrho cov ntaub ntawv xeem tau khaws cia mus tas li nyob rau hauv ib tug tshwj xeeb traceability ntaub ntawv rau txhua workpiece. Thib peb-CMA cov ntaub ntawv xeem tuaj yeem muab rau cov neeg siv khoom cov txheej txheem tshwj xeeb.
Kev txhawb nqa los ntawm ob lub 200,000 m² ntse tsim cov hauv paus, ISO triple tswj system ntawv pov thawj, CE daim ntawv pov thawj, thiab ntau patents rau kev kho pob zeb huv si, UNPARALLELED pawg- khoom siv los tiv thaiv- zoo li qub, qis- Samsung ion-leaching granite theem rau kev ua lag luam nrog TIs, Apple compatible, krib krib, thiab lwm yam. nrog electrostatic-rhiab siab siab-kev huv huv ntau lawm kab rau kev tshuaj xyuas wafer, soj ntsuam kuaj, thiab perovskite optical detection. Ntawm -cov ntaub ntawv pov thawj qhov chaw los ntawm cov neeg siv khoom pom tau tias cov theem tsim los ntawm cov txheej txheem ua haujlwm no txo ​​cov electrostatic tawg tsis xws luag los ntawm 92% thiab ze li tshem tawm cov wafer ua tsis tiav los ntawm kev sib kis ionic, txo cov kab ntau lawm scrapping tus nqi thiab cov khoom siv tu zaus. Lub tuam txhab txuas ntxiv koom tes nrog cov chaw soj ntsuam cov khoom siv semiconductor ntawm cov tsev kawm qib siab kom rov ua cov txheej txheem txheej txheem, ua kom zoo dua - ion ore tshuaj ntsuam cov qauv, thiab txhim kho dual{13}} txheej txheem tiv thaiv.
Ua raws li txoj cai zoo "Lub lag luam precision tsis tuaj yeem xav tau ntau dhau", UNPARALLELED tus qauv tiv thaiv - zoo li qub thiab tiv thaiv - ion-leaching processing solutions nyob qhov khoob hauv kev lag luam substrate tswj thiab daws ob qhov teeb meem tseem ceeb ntawm kev sib kis thiab hluav taws xob zoo li qub rau cov khoom siv tshuaj ntsuam xyuas wafer. Tsiv mus tom ntej, lub tuam txhab yuav txuas ntxiv nthuav nws cov khoom lag luam ntawm ultra-huv tshwj xeeb granite, tso tawm cov txheej txheem ua tiav rau cov khoom siv hluav taws xob semiconductor, pab lub ntiaj teb nti cov tuam txhab tsim cov khoom lag luam ruaj khov thiab txo cov nqi khiav lag luam thiab kev tu cov nqi rau cov kab ntau lawm huv si, thiab txhawb nqa siab - kev txhim kho zoo ntawm kev lag luam qib siab - txheej txheem semiconductor.